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| SEMICONDUCTOR RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs Package JEDEC STYLE 5 LEAD TO-247 August 1995 Features * 10A, 500V * rDS(ON) = 0.480 * Very Fast Turn-Off Characteristics * Nanosecond Switching Speeds * Electrostatic Discharge Protected * UIS Rating Curve * SOA is Power Dissipation Limited * High Input Impedance Description The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated in the symbol to the right, the turn-on of the main MOSFET is controlled by Gate 1 (G1). The control MOSFET, controlled by Gate 2 (G2), is distributed throughout the structure. Gate 2 provides a very low impedance and inductive path to rapidly discharge the gate of the main MOSFET. Gate 2 affords very fast turn-off (typically less than 25ns) when desired. A separate return connection, Source Kelvin (SK), is supplied for the gate drive circuit to avoid voltage induced transients from the output circuit during switching. The RFV10N50BE can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER RFV10N50BE PACKAGE TO-247 BRAND V10N50BE S Terminal Diagram D G1 G2 SK NOTE: When ordering use the entire part number. Formerly developmental type TA9881. Absolute Maximum Ratings TC = +25oC UNITS V V V KV A A A mJ W W/oC W W/oC oC Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Control FET Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . . . . . ESD Drain Current RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Control FET Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IAS Control FET Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Control FET Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright 500 +14, -0.3 +14, -0.3 2 10 25 Refer to UIS Curve 1.5 50 156 1.25 21 0.17 -55 to +150 (c) Harris Corporation 1995 File Number 3377.1 1 Specifications RFV10N50BE Electrical Specifications Case Temperature (TC) = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 0.25mA, VGS = 0V VGS = VDS, ID = 0.25mA VDS = 500V, VGS = 0V TC = +25oC TC = +125oC MIN 500 2 VGS = 0V to 10V VDD = 400V, ID = 10A, RL = 40 VDS = 25V, VGS = 0V, f = 1MHz Junction to Case Junction to Ambient TYP 20 30 21 5 145 17 57 3800 290 75 MAX 4 1 250 500 0.480 75 50 190 22 74 0.8 40 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W Gate-Source Leakage Current On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Thermal Resistance IGSS rDS(ON) tON tD(ON) tR tD(OFF) tF tOFF QG10 QGS QGD CISS COSS CRSS RJC RJA VGS = +12V, VGS = -0.3V ID = 10A, VGS = 10V VDD = 250V, ID = 10A, RL = 25, VGS1 = VGS2 = +10V, RGS1 = 6.25, RGS2 = 20 Control FET Specifications LIMITS PARAMETER Static Drain to Source Drain Source Breakdown Voltage Gate Threshold Voltage Total Gate Charge SYMBOL rDS(ON) BVDSS VGS(TH) QG10 TEST CONDITIONS VGS = 10V, ID = 1.0A ID = 1.0mA, VGS = 0V VDS = VGS, ID = 0.25mA ID = 1.0A, VGS = 10V MIN 14 2 TYP 1.6 15 MAX 4 5 UNITS V V nC Source-Drain Diode Ratings and Specifications LIMITS PARAMETER Continuous Source Current Pulsed Source Current Forward Voltage Reverse Recovery Time SYMBOL IS ISM VSD tRR ISD = 10A, VGS = 0V ISD = 10A, VGS = 0V, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 10 25 1.4 750 UNITS A A V ns 2 RFV10N50BE Typical Performance Curves CASE TEMPERATURE (TC) = +25oC 30 100s ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 50.0 IDM STARTING TJ = +25oC STARTING TJ = +150oC IF R = 0 tAV = (L)(IAS)/ (1.3 RATED BVDSS-VDD) IF R 0 tAV = (L/R) In[(IAS x R)/ (1.3 RATED BVDSS-VDD)+1] 10 1ms 10.0 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1 10 100 DC 100ms 10ms 1000 5.0 0.01 0.10 tAV, TIME IN AVALANCHE (ms) 1.00 2.00 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING 12 POWER DISSIPATION MULTIPLIER 25 35 45 55 65 75 85 95 105 115 125 135 145 1.2 10 ID, DRAIN CURRENT (A) 8 6 4 2 0 TC, CASE TEMPERATURE (oC) 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE FIGURE 4. NORMALIZED POWER DISSIPATION vs TEMPERTURE DERATING CURVE VDD = 30V 25 ID(ON), ON-STATE DRAIN CURRENT (A) PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX 25 PULSE DURATION = 250s, TC = +25oC VGS = 10V VGS = 6.0V VGS = 5.5V 20 ID, DRAIN CURRENT (A) 20 15 15 +150oC 10 +25oC 5 -40oC 10 VGS = 5V 5 VGS = 4.5V 0 0 2.5 5.0 7.5 10.0 12.5 15.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 3 RFV10N50BE Typical Performance Curves (Continued) PULSE DURATION = 250s, VGS = 10V, ID = 10A rDS(ON), NORMALIZED ON-RESISTANCE 3.0 2.5 2.0 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 o 2.0 VGS(TH), NORMALIZED GATE VGS = VDS, ID = 250A THRESHOLD VOLTAGE 1.5 1.0 0.5 0 125 150 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) TJ, JUNCTION TEMPERATURE ( C) FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE BVDSS, NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE ID = 250A 2.0 5000 VGS = 0V, FREQUENCY (f) = 1MHz 1.5 C, CAPACITANCE (pF) 4000 CISS 3000 1.0 2000 COSS 1000 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) CRSS 0 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 25 FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE FIGURE 10. TYPICAL CAPACITANCE vs VOLTAGE 500 VDS , DRAIN SOURCE VOLTAGE (V) 10 VGS , GATE SOURCE VOLTAGE (V) 400 VDD = BVDSS VDD = BVDSS 8 ZJC, NORMALIZED THERMAL RESPONSE 10 1 300 6 0.1 PD 10-2 200 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS RL = 50 IG(REF) = 3.25mA VGS = 10V 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 4 t1 t2 100 2 0 0 10-3 10-5 DUTY CYCLE, D = t1/t2 TJ = PD x ZJC + TC 10-4 10-3 10-2 0.1 1 10 t, RECTANGULAR PULSE WIDTH (s) FIGURE 11. TYPICAL SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO APPLICATION NOTES AN7254 AND AN7260 FIGURE 12. MAXIMUM NORMALIZED TRANSIENT THERMAL IMPEDANCE 4 RFV10N50BE Test Circuits and Waveforms +10V RL D VGS1 0V VGS2 0 G2 + VDD 90% VGS1 0V 10% <20ns +10V VGS2 0V t(ON) tD(ON) tR 90% 50% 10% t(OFF) tD(OFF) RGS1 VGS1 0V VGS2 0V SK RGS2 S VDS 90% 10% 10% tF 90% 50% G1 - FIGURE 13. RESISTIVE SWITCHING TEST CIRCUITS FIGURE 14. RESISTIVE SWITCHING WAVEFORMS VDS DUT L RG + VDD BVDSS tP IL 0.01 IAS VDS VDD VGS VARY tP TO OBTAIN REQUIRED PEAK IAS 0V tP tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS 5 RFV10N50BE Packaging E A OS Q OR D TERM. 6 OP TO-247 5 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE INCHES SYMBOL A b b1 b2 c D MIN 0.180 0.046 0.060 0.095 0.020 0.800 0.605 MAX 0.190 0.051 0.070 0.105 0.026 0.820 0.625 MILLIMETERS MIN 4.58 1.17 1.53 2.42 0.51 20.32 15.37 MAX 4.82 1.29 1.77 2.66 0.66 20.82 15.87 NOTES 2, 3 1, 2 1, 2 1, 2, 3 4 4 5 1 - L1 L b1 b2 b 1 2 34 5 c E e J1 5 432 1 0.110 TYP 0.438 BSC 0.090 0.620 0.145 0.138 0.210 0.195 0.260 0.105 0.640 0.155 0.144 0.220 0.205 0.270 2.79 TYP 11.12 BSC 2.29 15.75 3.69 3.51 5.34 4.96 6.61 2.66 16.25 3.93 3.65 5.58 5.20 6.85 e1 J1 L L1 OP Q OR OS e e1 BACK VIEW TERMINAL CONNECTIONS Lead No. 1 Lead No. 2 - Gate 1 (G1) - Gate 2 (G2) Lead No. 3 and - Drain (D) Mounting Flange Lead No. 4 Lead No. 5 - Source Kelvin (SK) - Source (S) NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS UNITED STATES Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Harris Semiconductor PTE Ltd. No. 1 Tannery Road Cencon 1, #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400 SEMICONDUCTOR 6 |
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